Photodiode and method for manufacturing the same

A photodiode, comprising:

• a substrate that has a first surface and a second surface opposite to said first surface;
• a device structure that is provided between said first surface and said second surface and that includes an N-type doped region adjacent to said first surface, a non-doped intrinsic layer, and a P-type doped region adjacent to said second surface;
• a barrier ring region that is disposed in said substrate at a periphery of an upper portion of said substrate and that is spaced apart from said P-type doped region, an upper surface of said barrier ring region being flush with said second surface;
• a photosensitive region that is located above said P-type doped region;
• an oxide ring that is disposed on said substrate and that surrounds said photosensitive region;
• and
• an oxide layer that is disposed between said oxide ring and said second surface;
• wherein said P-type doped region includes a deep doped region and a shallow doped region that are adjacent to each other, said deep doped region and said shallow doped region being aligned with said photosensitive region.