Replacement Metal Gate Integration for Gate All Around Transistors

A semiconductor device, comprising:

• a wafer;
• and
• at least a first transistor of a first polarity and a second transistor of a second polarity on the wafer, wherein the first transistor comprises a stack of first active layers and a first gate electrode that surrounds a portion of each of the first active layers, wherein the second transistor comprises a stack of second active layers and a second gate electrode that surrounds a portion of each of the second active layers, and wherein the first gate electrode and the second gate electrode have a single pair of vertical adjoining sidewalls.

A semiconductor device, comprising:

• a wafer;
• and
• at least a first transistor of a first polarity and a second transistor of a second polarity on the wafer, wherein the first transistor comprises a stack of first active layers, a first interfacial layer disposed on the stack of first active layers, a first gate dielectric disposed on the first interfacial layer, and a first gate electrode disposed on the first gate dielectric and which surrounds a portion of each of the first active layers, wherein the second transistor comprises a stack of second active layers, a second interfacial layer disposed on the stack of second active layers, a second gate dielectric disposed on the second interfacial layer, and a second gate electrode disposed on the second gate dielectric and which surrounds a portion of each of the second active layers, and wherein the first gate electrode and the second gate electrode have a single pair of vertically adjoining sidewalls.

A semiconductor device, comprising:

• a wafer;
• and
• at least a first transistor of a first polarity and a second transistor of a second polarity on the wafer, wherein the first transistor comprises a stack of first active layers, a first gate electrode that surrounds a portion of each of the first active layers, and both a first gate dielectric and a gate dielectric cap disposed on the stack of first active layers beneath the first gate electrode, wherein the second transistor comprises a stack of second active layers, a second gate electrode that surrounds a portion of each of the second active layers, and a second gate dielectric disposed on the stack of second active layers beneath the second gate electrode, and wherein the first gate electrode and the second gate electrode have a single pair of vertically adjoining sidewalls.

A method of fabricating a semiconductor device, the method comprising:

• forming at least a first transistor of a first polarity and a second transistor of a second polarity on a wafer, wherein the first transistor comprises a first gate electrode, wherein the second transistor comprises a second gate electrode, and wherein the first gate electrode and the second gate electrode have a single pair of vertically adjoining sidewalls.