Semiconductor device and semiconductor module
AssigneeRohm Co., Ltd.
InventorsBungo TANAKA, Kazumasa NISHIO, Kosei OSADA
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Abstract
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate and a substrate-side insulating layer disposed on the semiconductor substrate. The substrate-side insulating layer includes: a first oxide film; a second oxide film, disposed on the first oxide film and separated from the first oxide film; and a first nitride insulating layer and a second nitride insulating layer disposed between the first oxide film and the second oxide film. The second nitride insulating layer has a film density higher than a film density of the first nitride insulating layer.
Claims13
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- a substrate-side insulating layer, disposed on the semiconductor substrate, wherein the substrate-side insulating layer includes:
- a first oxide film;
- a second oxide film, disposed on the first oxide film and separated from the first oxide film;
- and
- a first nitride insulating layer and a second nitride insulating layer disposed between the first oxide film and the second oxide film, wherein
- the second nitride insulating layer has a film density higher than a film density of the first nitride insulating layer.
Dependencies are inferred from the claim text.