Image sensing device

Abstract

An image sensing device includes a pixel region provided in a first portion of a semiconductor substrate such that photoelectric conversion elements for converting incident light into an electrical signal are disposed in the first portion of the semiconductor substrate, a dummy region located outside the pixel region to surround the pixel region and provided in a second portion of the semiconductor substrate without including a photoelectric conversion element, first microlenses disposed over the first portion of the semiconductor substrate and in the pixel region, the first microlenses configured to converge the incident light onto corresponding photoelectric conversion elements, second microlenses disposed over the second portion of the semiconductor substrate and in the dummy region, the second microlenses isolated from the first microlenses, and at least one alignment pattern disposed in the second portion of semiconductor substrate so as to be aligned with the second microlenses.

Dependencies are inferred from the claim text.