SiC SUBSTRATE AND SiC INGOT

A SiC substrate,

• wherein, when resistivities at a plurality of first measurement points that are in a region inside a boundary located 5 mm inward from an outer circumferential end thereof and that include a center and a plurality of measurement points separated by 10 mm from each other in the [11-20] direction or the [−1-120] direction from the center, and at two second measurement points that are located 1 mm inward from the outer circumferential end and located in each of the [11-20] direction from the center and the [−1-120] direction from the center are measured, a difference between the maximum resistivity and the minimum resistivity among the resistivities of each of the plurality of first measurement points and the two second measurement points is 1 mΩ·cm or less, and
• the diameter is 199 mm or more.

A SiC ingot,

• wherein, when a SiC substrate is cut out and resistivities on a cut surface thereof are measured, a difference between the maximum resistivity and the minimum resistivity among resistivities at each of a plurality of first measurement points that are in a region inside a boundary located 5 mm inward from an outer circumferential end and that include a center and a plurality of measurement points separated by 10 mm from each other in the [11-20] direction or the [−1-120] direction from the center, and two second measurement points that are located 1 mm inward from the outer circumferential end and located in each of the [11-20] direction from the center and the [−1-120] direction from the center is 1 mΩ19 cm or less, and
• a region other than a high nitrogen concentration region called a facet is included.

A SiC ingot,

• wherein, when a SiC substrate is cut out and resistivities on a cut surface thereof are measured, a difference between the maximum resistivity and the minimum resistivity among resistivities at each of a plurality of first measurement points that are in a region inside a boundary located 5 mm inward from an outer circumferential end and that include a center and a plurality of measurement points separated by 10 mm from each other in the [11-20] direction or the [−1-120] direction from the center, and two second measurement points that are located 1 mm inward from the outer circumferential end and located in each of the [11-20] direction from the center and the [−1-120] direction from the center is 2 mΩ·cm or less, a region other than a high nitrogen concentration region called a facet is included, and
• the diameter is 149 mm or more.