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US 2024/0183071 A1Published application
POLYCRYSTALLINE SiC MOLDED ARTICLE AND METHOD FOR PRODUCING SAME
AssigneeTokai Carbon Co., Ltd.
InventorsTakuji IIDA, Hiroyuki JINDO, Shohei OISHI, Ikuya TAKAHASHI, Yuji USHIJIMA, Reiko YASHIKIDA
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Abstract
The present invention addresses the problem of providing: a polycrystalline SiC molded article that has a small volume resistivity despite having a small crystal grain size; and a method for producing the same. The present invention provides a polycrystalline SiC molded body in which the average crystal grain size of 5 μm or less, a nitrogen concentration of 2.7×1019 to 5.4×1020 (pcs./cm3), and the product of the carrier density×Hall mobility of 4.0×1020 to 6.0×1021 (pcs./cmVsec).
Claims7
A polycrystalline SiC molded body having
- an average crystal grain size of 5 μm or less,
- a nitrogen concentration of 2.7×1019 to 5.4×1020 (atoms/cm3), and
- a product of carrier density×Hall mobility of 4.0×1020 to 6.0×1021 (atoms/cmVsec).
(canceled)
Dependencies are inferred from the claim text.