Epitaxial growth apparatus and multi-layer gas supply module used therefor
AssigneePjp Tech Inc
InventorsBum Ho CHOI, Kyung Shin PARK, Hyun Ho KWON, Dong Hyoun KIM, Suk Ho LIM, Jong Wook JEONG, Seung Soo LEE
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AssigneePjp Tech Inc
InventorsBum Ho CHOI, Kyung Shin PARK, Hyun Ho KWON, Dong Hyoun KIM, Suk Ho LIM, Jong Wook JEONG, Seung Soo LEE
Estimating the term…
Provided are an epitaxial growth apparatus and a multi-layer gas supply module used therefor, the epitaxial growth apparatus including: a reaction chamber; a susceptor positioned in the reaction chamber and configured to seat a wafer thereon; and a multi-layer gas supply module configured to supply a gas to the reaction chamber to form an epitaxial layer on the wafer, wherein the multi-layer gas supply module includes an injector including ports of a plurality of layers, each of which discharges a different gas for each layer, among the ports of the plurality of layers, the ports of each layer including a center port corresponding to a central region of the wafer, and a pair of edge ports corresponding to both edge regions of the wafer, and a flow distribution unit configured to distribute gas flows input to the center port and the edge port among the ports of each layer independently from each other.
An epitaxial growth apparatus comprising:
A multi-layer gas supply module used for an epitaxial growth apparatus, in which the module supplies a gas input to a reaction chamber of the epitaxial growth apparatus, the module comprising:
An epitaxial growth apparatus comprising:
Dependencies are inferred from the claim text.