Area selective deposition through surface silylation

A method of selectively depositing a film, the method comprising:

• treating a substrate comprising a non-hydroxyl-containing surface and a second surface with one or more of ozone or hydrogen peroxide to form hydroxide groups on the second surface;
• exposing the second surface and the hydroxide groups to a silylating precursor to form a passivated surface, wherein the silylating precursor has a general formula (A)
• wherein R1, R2, and R3 independently comprise hydrogen (H) or an alkyl group having from 1 to 9 carbon atoms, R4 and R5 independently comprise one or more of hydrogen, an alkyl group, a halide, an alkenyl group, an aryl, or aromatic group, a cycloalkyl group, and a trimethylsilyl group (Si(CH3)3), and wherein q is an integer in a range of from 0 to 5;
• flowing a first precursor over the substrate, the first precursor having a general formula R6—(X)n
• wherein R6 comprises one or more of an alkyl group, an alkenyl group, an aryl, or aromatic group, and a cycloalkyl group, Xn comprises one or more of a hydroxide group, an aldehyde group, a ketone group, an acid group, an amino group, an isocyanate group, a thiocyanate group, and an acyl chloride group, and n is an integer in a range of from 1 to 6,
• wherein the first precursor reacts with a reactive group on the non-hydroxyl-containing surface to form a first portion of a selectively deposited layer on the non-hydroxyl-containing surface;
• removing a first precursor effluent comprising the first precursor from the substrate;
• flowing a second precursor over the substrate to form a selectively deposited layer on the non-hydroxyl-containing surface and not on the passivated surface, the second precursor having a general formula R7—(Y)n
• wherein R7 comprises one or more of an alkyl group, an alkenyl group, an aryl, or an aromatic group, and a cycloalkyl group, Yn comprises one or more of a hydroxide group, an aldehyde group, a ketone group, an acid group, an amino group, an isocyanate group, a thiocyanate group, and an acyl chloride group, and n is an integer in a range of from 1 to 6,
• wherein the second precursor reacts with the first portion to form the selectively deposited layer;
• and
• removing a second precursor effluent comprising the second precursor from the substrate.