Multi-pulse deposition processes

A processing tool comprising:

• a central transfer station comprising a robot configured to move a wafer;
• a plurality of process stations, each process station connected to the central transfer station and providing a processing region separated from processing regions of adjacent process stations, the plurality of process stations comprising one or more of a chemical vapor deposition (CVD) chamber or an atomic layer deposition (ALD) chamber;
• and
• a controller connected to the central transfer station and the plurality of process stations, the controller configured to activate the robot to move the wafer between process stations, and to control a processing method for forming a metal-containing film on the wafer, the processing method comprising exposing the wafer to a constant flow of an inert gas and a co-flow of a pulse of a metal-containing precursor and a pulse of a reactant to form the metal-containing film, the pulse of the metal-containing precursor and the pulse of the reactant interrupted by a mini purge, wherein the metal-containing precursor is charged during the mini purge.