Layered body having function as transparent electroconductive film and method for producing same, and oxide sputtering target for said layered body production

2:

• A layered body obtained by layering an ITO film and an oxide film, wherein R2/R1≤1.0 is satisfied when a surface resistance of the layered body that underwent atmosphere annealing at 220° C. is R1, and a surface resistance of the layered body that underwent atmosphere annealing at 550° C. is R2.

3:

• The layered body according to claim 2, wherein a ratio of the surface resistance R1 and the surface resistance R2 is R2/R1≤0.5.

4:

• The layered body according to claim 2, wherein the visible light average transmittance of the layered body that underwent atmosphere annealing at 220° C. is 85% or higher.

5:

• The layered body according to claim 2, wherein the visible light average transmittance of the layered body that underwent atmosphere annealing at 550° C. is 90% or higher.

6:

• The layered body according to claim 2, wherein n1>n2 is satisfied when a refractive index of the ITO film is n1, and a refractive index of the oxide film is n2.

7:

• The layered body according to claim 2, wherein the oxide film includes one of more types among Zn, Ga, and Si.

8:

• A layered body obtained by layering an ITO film and an oxide film, wherein the oxide film contains Zn in an amount of 0 mol % or more and less than 69 mol % in terms of ZnO, Ga in an amount of 9 mol % or more and 100 mol % or less in terms of Ga2O3, and Si in an amount of 0 mol % or more and less than 60 mol % in terms of SiO2, a film thickness of the oxide film is less than 90 nm, and a ratio of a film thickness of the ITO film and a film thickness of the oxide film (film thickness of the ITO film/film thickness of the oxide film) is less than 15.

9:

• The layered body according to claim 8, wherein the oxide film contains Zn in an amount of more than 10 mol % and less than 60 mol % in terms of ZnO, Ga in an amount of 10 mol % or more and 60 mol % or less in terms of Ga2O3, and Si in an amount of 25 mol % or more and less than 50 mol % in terms of SiO2.

10:

• The layered body according to claim 8, wherein the oxide film is amorphous.

11:

• A method of producing the layered body according to claim 8, wherein an oxide film is layered on an ITO film, and the obtained layered body is annealed at 200° C. or higher.

12:

• An oxide sputtering target for producing the layered body according to claim 8, wherein the oxide sputtering target contains Zn in an amount of 0 mol % or more and less than 69 mol % in terms of ZnO, Ga in an amount of 9 mol % or more and 100 mol % or less in terms of Ga2O3, and Si in an amount of 0 mol % or more and less than 60 mol % in terms of SiO2.

13:

• The oxide sputtering target according to claim 12, wherein the oxide sputtering target contains Zn in an amount of more than 10 mol % and less than 60 mol % in terms of ZnO, Ga in an amount of 10 mol % or more and 60 mol % or less in terms of Ga2O3, and Si in an amount of 25 mol % or more and less than 50 mol % in terms of SiO2.

14:

• The oxide sputtering target according to claim 12, wherein the oxide sputtering target contains, as a sintering additive, one or more types among B2O3, P2O5, V2O5, Sb2O3, TeO2, Tl2O3, PbO, Bi2O3, and MoO3.

15:

• The layered body according to claim 2, wherein the oxide film is amorphous.

16:

• The layered body according to claim 1, wherein the oxide film is amorphous.

17:

• A method of producing the layered body according to claim 1, wherein an oxide film is layered on an ITO film, and the obtained layered body is annealed at 200° ° C. or higher.

18:

• The layered body according to claim 1, wherein n1>n2 is satisfied when a refractive index of the ITO film is n1, and a refractive index of the oxide film is n2.

19:

• The layered body according to claim 1, wherein the oxide film includes one of more types among Zn, Ga, and Si.