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US 2024/0182498 A1Published application
Disilylamine precursors and related methods
AssigneeEntegris, Inc.
InventorsSeongCheol Kim, YeRim Yeon, SangJin Lee, DaHye Kim, MinSeok Ryu, KieJin Park
Life of this patent
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Abstract
A composition comprises a disilylamine precursor. The disilylamine precursor comprises a functional group attached to a nitrogen atom of the dilsilylamine precursor. The functional group comprises an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl. Related methods are provided, including a method for forming the disilylamine precursor and a method for vapor deposition.
Claims20
A precursor comprising:
- a compound of the formula:
- where:
- R1 is an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R2 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R3 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R4 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R5 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R6 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R7 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl.
6 more elements
A method for forming a precursor, the method comprising:
- obtaining an amine compound;
- obtaining at least one silylhalide compound;
- contacting the amine compound and the at least one silylhalide compound, so as to form the precursor,
- wherein the precursor is a compound of the formula:
- where:
- R1 is an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R2 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R3 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R4 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R5 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R6 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R7 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl.
9 more elements
A method for vapor deposition comprising:
- obtaining a precursor, wherein the precursor comprises a compound of the formula:
- where:
- R1 is an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R2 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R3 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R4 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R5 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R6 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- R7 is a hydrogen, an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl;
- vaporizing the precursor to obtain a vaporized precursor;
- and
- contacting the vaporized precursor with a substrate, under vapor deposition conditions, so as to form a silicon-containing film on the substrate.
9 more elements
Dependencies are inferred from the claim text.