Brush for cleaning wafers after chemical mechanical polishing (cmp) process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJhih-Fong Lin, Liqing Wen, Le Lu, Deng-Gao Chen
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Abstract
Brushes for cleaning wafers after a Chemical Mechanical Polishing (CMP) process and methods for fabricating such brushes are provided. An exemplary method for fabricating a brush for cleaning wafers after a Chemical Mechanical Polishing (CMP) process includes forming a brush configured for contacting the wafers; and, while forming the brush, controlling formation of pores within the brush to a maximum pore dimension, wherein the maximum pore dimension is 1000 nanometers (nm).
Claims20
A method for fabricating a brush for cleaning wafers after a Chemical Mechanical Polishing (CMP) process, the method comprising:
- forming the brush configured for contacting the wafers;
- and
- while forming the brush, controlling formation of pores within the brush to a maximum pore dimension, wherein the maximum pore dimension is 1000 nanometers (nm).
A method for fabricating a brush for cleaning wafers after a Chemical Mechanical Polishing (CMP) process, the method comprising:
- forming the brush with an outer surface configured for contacting the wafers, wherein the outer surface is formed from a material selected from a PVA-copolymer and a functionalized PVA polymer, and having a polymer backbone.
A brush for cleaning wafers after a Chemical Mechanical Polishing (CMP) process, the brush comprising:
- a sleeve member;
- and
- a plurality of spaced-apart nodules disposed to protrude from the sleeve member, and wherein an outer surface of the nodules is formed by a porous polymeric material having pores, and wherein the pores have a maximum pore dimension of 1000 nanometers (nm).
Dependencies are inferred from the claim text.