Mems transducer device for high-frequency applications, and manufacturing method

A method of manufacturing a MEMS device, comprising:

• forming a transduction module including forming a plurality of transducer devices mutually arranged according to an arrangement pattern of transducer devices adjacent to each other and separated from each other by surface regions of the transduction module;
• forming a stiffening structure at the surface regions of the transduction module to at least partially surround each transducer device of the plurality of transducer devices;
• forming a plurality of conductive coupling elements on the stiffening structure, each conductive coupling element of the plurality of conductive coupling elements physically and electrically couples the transduction module to the signal processing assembly, and each conductive coupling element of the plurality of conductive coupling elements being physically separated and electrically insulated from each other;
• forming a plurality of first conductive tracks, each first conductive track of the plurality of conductive tracks is electrically connected to a respective transducer device of the plurality of transducer devices and to a respective conductive coupling element of the plurality of conductive coupling elements;
• and
• coupling a signal processing assembly to the plurality of conductive coupling elements,
• wherein each respective conductive coupling element of the plurality of conductive coupling elements has a section with a shape such as to maximize overlapping of the stiffening structure at least one corresponding transducer device of the plurality of transducer devices.

A device, comprising:

• a structural body including:
• a semiconductor layer including a first surface and a second surface opposite to the first surface;
• a membrane of the semiconductor layer having a first thickness;
• an insulating layer on the first surface and overlapping with the membrane;
• a thick portion of the semiconductor layer having a second thickness greater than the first thickness, the thick portion spaced laterally outward from the thick portion;
• an actuator on the insulating layer and overlapping with the membrane, the actuator including a first side on the insulating layer, a second side opposite to the first side and spaced apart from the insulating layer, a first electrode at the first side, and a second electrode at the second side;
• a stiffening structure extends around the transducer device, the stiffening structure is on the insulating layer;
• a first conductive track extends along the first surface of the semiconductor layer, the insulating layer, the stiffening structure and the actuator, the first conductive track is coupled to the first electrode;
• a second conductive track extends along the first surface of the semiconductor layer, the insulating layer, the stiffening structure, and the actuator, the second conductive track is coupled to the second electrode;
• and
• a first conductive coupling element coupled to a portion of the first conductive track on the stiffening structure, the first conductive coupling element having a shape selected from at least one of the following of a hypocycloid shape having a number of cusps equal to or greater than three, a triangular shape, or a quadrangular shape;
• and
• a second conductive coupling element coupled to a portion of the second conductive track on the stiffening structure, the second conductive coupling element having a shape selected from at least one of the following of the hypocycloid shape having a number of cusps equal to or greater than three, the triangular shape, or the quadrangular shape.