Negative electrode plate, secondary battery, and electric apparatus
AssigneeNingde Amperex Technology Limited
InventorsZhilei ZHOU, Pengyang FENG
Life of this patent
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Abstract
A negative electrode plate includes: a negative electrode current collector; and a negative electrode active material layer that contains negative electrode active substance particles and that is disposed on at least one side of the negative electrode current collector. The negative electrode active material layer includes: a surface layer with an ID1/IG1 value of A, where 0.55≤A≤0.78; and a substrate layer with an ID2/IG2 value of B located between the negative electrode current collector and the surface layer, where 0.78≤B≤0.96. The negative electrode active material layer satisfies: 0.60≤A/B≤1.0.
Claims20
A negative electrode plate, comprising:
- a negative electrode current collector;
- and
- a negative electrode active material layer disposed on at least one side of the negative electrode current collector, wherein the negative electrode active material contains negative electrode active substance particles;
- wherein the negative electrode active material layer comprises
- a surface layer with an ID1/IG1 value of A, and
- a substrate layer with an ID2/IG2 value of B;
- the substrate layer is located between the negative electrode current collector and the surface layer;
- wherein,
- 0.55≤A≤0.78,
- 0.78≤B≤0.96, and
- 0.60≤A/B≤1.0;
- wherein,
- ID1 is a peak intensity of a scatter peak of a negative electrode active substance in the surface layer at a Raman shift of 1328-1359 cm−1 in the Raman spectrum;
- IG1 is a peak intensity of the scatter peak of the negative electrode active substance in the surface layer at a Raman shift of 1578-1585 cm−1 in the Raman spectrum;
- ID2 is a peak intensity of the scatter peak of the negative electrode active substance in the substrate layer at a Raman shift of 1328-1359 cm−1 in the Raman spectrum;
- and
- IG2 is a peak intensity of the scatter peak of the negative electrode active substance in the substrate layer at a Raman shift of 1578-1585 cm−1 in the Raman spectrum.
A secondary battery, comprising a negative electrode plate, the negative electrode plate comprises
- a negative electrode current collector;
- and
- a negative electrode active material layer disposed on at least one side of the negative electrode current collector, wherein the negative electrode active material contains negative electrode active substance particles;
- wherein the negative electrode active material layer comprises
- a surface layer with an ID1/IG1 value of A, and
- a substrate layer with an ID2/IG2 value of B;
- the substrate layer is located between the negative electrode current collector and the surface layer;
- wherein,
- 0.55≤A≤0.78,
- 0.78≤B≤0.96, and
- 0.60≤A/B≤1.0;
- wherein,
- ID1 is a peak intensity of a scatter peak of a negative electrode active substance in the surface layer at a Raman shift of 1328-1359 cm−1 in the Raman spectrum;
- IG1 is a peak intensity of the scatter peak of the negative electrode active substance in the surface layer at a Raman shift of 1578-1585 cm−1 in the Raman spectrum;
- ID2 is a peak intensity of the scatter peak of the negative electrode active substance in the substrate layer at a Raman shift of 1328-1359 cm−1 in the Raman spectrum;
- and
- IG2 is a peak intensity of the scatter peak of the negative electrode active substance in the substrate layer at a Raman shift of 1578-1585 cm−1 in the Raman spectrum.
An electric apparatus, comprising a secondary battery, the secondary battery comprises a negative electrode plate, and the negative electrode plate comprises
- a negative electrode current collector;
- and
- a negative electrode active material layer disposed on at least one side of the negative electrode current collector;
- wherein the negative electrode active material contains negative electrode active substance particles;
- wherein the negative electrode active material layer comprises
- a surface layer with an ID1/IG1 value of A, and
- a substrate layer with an ID2/IG2 value of B;
- the substrate layer is located between the negative electrode current collector and the surface layer;
- wherein,
- 0.55≤A≤0.78,
- 0.78≤B≤0.96, and
- 0.60≤A/B≤1.0;
- wherein,
- ID1 is a peak intensity of a scatter peak of a negative electrode active substance in the surface layer at a Raman shift of 1328-1359 cm−1 in the Raman spectrum;
- IG1 is a peak intensity of the scatter peak of the negative electrode active substance in the surface layer at a Raman shift of 1578-1585 cm−1 in the Raman spectrum;
- ID2 is a peak intensity of the scatter peak of the negative electrode active substance in the substrate layer at a Raman shift of 1328-1359 cm−1 in the Raman spectrum;
- and
- IG2 is a peak intensity of the scatter peak of the negative electrode active substance in the substrate layer at a Raman shift of 1578-1585 cm−1 in the Raman spectrum.
Dependencies are inferred from the claim text.