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US 2024/0178338 A1Published application
Photoelectric conversion element and method for manufacturing photoelectric conversion element
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKyohei HORIGUCHI, Yuma KITAMURA
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Abstract
A photoelectric conversion element includes a photoelectric conversion portion, a first infrared emission layer that is formed on the photoelectric conversion portion and includes a first material selected from one or more of Y2O3, HfO2, and ZrO2, and a second infrared emission layer that is formed on the first infrared emission layer and includes a second material selected from SiO2 or Al2O3.
Claims9
A photoelectric conversion element comprising:
- a photoelectric conversion portion;
- a first infrared emission layer that is formed on the photoelectric conversion portion and includes a first material selected from one or more of Y2O3, HfO2, and ZrO2;
- and
- a second infrared emission layer that is formed on the first infrared emission layer and includes a second material selected from at least one of SiO2 and Al2O3.
1 more element
A method for manufacturing a photoelectric conversion element, the method comprising:
- forming a photoelectric conversion portion;
- forming a first infrared emission layer on the photoelectric conversion portion using a first material selected from one or more of Y2O3, HfO2, and ZrO2;
- and
- forming a second infrared emission layer on the first infrared emission layer using a second material selected from at least one of SiO2 and Al2O3.
1 more element
Dependencies are inferred from the claim text.