Enhanced gan hemt radio-frequency device and manufacturing method thereof

Abstract

An enhanced GaN high electron mobility transistor (HEMT) radio-frequency device and a manufacturing method thereof are provided. The enhanced GaN HEMT radio-frequency device includes a substrate, a first AlN interposed layer, a GaN buffer layer, a GaN trench layer, a second AlN interposed layer, an AlGaN barrier layer, a p-AlGaN layer, a metal drain electrode, a metal source electrode, and a metal gate electrode. Under an extremely high vacuum degree, metal Mg is doped and diffused to the AlGaN layer to form the p-AlGaN layer, and the metal Mg further forms a p-n junction with the undoped AlGaN layer, thereby depleting a two-dimensional electron gas (2DEG) under the gate. A HfO2 layer covers the metal Mg to prevent oxidation of the metal Mg.

Dependencies are inferred from the claim text.