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US 2024/0178298 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeKioxia Corporation
InventorsTakayuki BEPPU, Hiroko TAHARA, Masayuki KITAMURA, Hiroshi TOYODA, Hiroyuki OHTORI
Life of this patent
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Abstract
In one embodiment, a semiconductor device includes a first layer including a metal element. The device further includes a first insulator that is in contact with the first layer and includes silicon and oxygen. The device further includes a second layer that is in contact with the first insulator and includes molybdenum or tungsten.
Claims20
A semiconductor device comprising:
- a first layer including a metal element;
- a first insulator that is in contact with the first layer and includes silicon and oxygen;
- and
- a second layer that is in contact with the first insulator and includes molybdenum or tungsten.
1 more element
A semiconductor device comprising:
- a substrate;
- and
- a first interconnect layer provided on the substrate,
- wherein the first interconnect layer includes:
- a first layer including a first metal element;
- a first insulator that is in contact with the first layer and includes silicon and oxygen;
- and
- a second layer that is in contact with the first insulator and includes a second metal element.
5 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a first layer including a metal element;
- forming a first film that is in contact with the first layer and includes silicon;
- changing the first film into a first insulator that is in contact with the first layer and includes silicon and oxygen, and a second film that is in contact with the first insulator and includes molybdenum or tungsten;
- and
- forming a third film that is in contact with the second film and includes molybdenum or tungsten, thereby forming a second layer including the second film and the third film.
2 more elements
Dependencies are inferred from the claim text.