Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising:

• providing a substrate;
• preparing an epitaxial structure on a side of the substrate, and a two-dimensional electron gas being formed in the epitaxial structure located in an active region of the semiconductor device;
• preparing an electrode structure on a side, away from the substrate, of the epitaxial structure and in the active region, and the electrode structure comprising a plurality of ohmic contact electrodes;
• preparing a first dielectric layer on a side, away from the substrate, of the electrode structure, and the electrode structure being covered by the first dielectric layer;
• preparing an electrode connection line on a side, away from the substrate, of the first dielectric layer, the electrode connection line comprising an ohmic contact electrode connection line, and the ohmic contact electrode connection line being electrically connected to the plurality of ohmic contact electrodes;
• preparing a second dielectric layer on a side, away from the substrate, of the electrode connection line, and the electrode connection line being covered by the second dielectric layer;
• and
• preparing an electrode bonding pad on a side, away from the substrate, of the electrode connection line, the electrode bonding pad comprising an ohmic contact electrode bonding pad, the ohmic contact electrode bonding pad being electrically connected to the ohmic contact electrode connection line, and at least a part of the ohmic contact electrode bonding pad being located in the active region.