Transistor unit including shared gate structure, and sub-word line driver and semiconductor device based on the same transistor unit

A sub-word line driver, comprising:

• a first sub-word line driver having a first transistor for supplying a negative voltage to a first word line in response to a driving signal;
• and
• a second sub-word line driver having a second transistor for supplying the negative voltage to a second word line in response to the driving signal,
• wherein the first transistor and the second transistor constitute a transistor circuit with a shared gate structure, and
• wherein the transistor circuit comprises:
• an active area having a body extending in a first direction on a substrate, and a protrusion extending in a second direction perpendicular to the first direction from a central portion of the body in the first direction;
• and
• a gate arranged above the active area to overlap a channel area of the active area, and having an inverted pi () structure that, from a plan view, surrounds on three sides but does not cover a portion of the active area that includes two corner portions of the active area.

A semiconductor device comprising:

• a cell area in which a plurality of memory cells are arranged in a two-dimensional array structure;
• and
• a core/peri area around the cell area and including driving circuits for driving the memory cells,
• wherein a sub-word line driver, which is one of the driving circuits, is in the core/peri area and comprises:
• a first sub-word line driver having a first transistor for supplying a negative voltage to a first word line in response to a driving signal;
• and a second sub-word line driver having a second transistor for supplying the negative voltage to a second word line in response to the driving signal,
• wherein the first transistor and the second transistor constitute a transistor unit,
• wherein the transistor unit includes a gate having an inverted pi () shape, and
• wherein the first and second transistors share the gate.