Semiconductor device with energy-removable layer
AssigneeNanya Technology Corporation
InventorTSE-YAO HUANG
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a first gate structure positioned on the substrate; a second gate structure positioned on the substrate and next to the first gate structure; a layer of energy-removable material positioned on the substrate and between the first gate structure and the second gate structure; a dielectric layer positioned on the substrate and covering the first gate structure and the second gate structure; and a first opening positioned along the dielectric layer to expose the layer of energy-removable material.
Claims10
A semiconductor device, comprising:
- a substrate;
- a first gate structure positioned on the substrate, comprising:
- a first gate insulating layer positioned on the substrate;
- a first gate conductive layer positioned on the first gate insulating layer;
- and
- a first gate capping layer positioned on the first gate conductive layer;
- a second gate structure positioned on the substrate and next to the first gate structure;
- a layer of energy-removable material positioned on the substrate and between the first gate structure and the second gate structure;
- a dielectric layer positioned on the substrate and covering the first gate structure and the second gate structure;
- and
- a first opening positioned along the dielectric layer to expose the layer of energy-removable material;
- wherein the first gate insulating layer comprises a high-k material;
- wherein the first gate capping layer comprises silicon nitride, silicon oxynitride, or silicon nitride oxide;
- wherein a top surface of the first gate structure and a top surface of the layer of energy-removable material are substantially coplanar.
A semiconductor device, comprising:
- a substrate;
- a first gate structure positioned on the substrate;
- a second gate structure positioned on the substrate and next to the first gate structure;
- a lower portion positioned between the first gate structure and the second gate structure;
- an upper portion positioned on the lower portion;
- and
- a plurality of first spacers positioned between lower portion and the first gate structure and between the lower portion and the second gate structure;
- wherein the lower portion and the upper portion configure a contact structure;
- wherein a width of the upper portion is greater than a width of the lower portion;
- wherein the width of the lower portion is gradually decreased towards the substrate;
- wherein the first gate structure comprises:
- a first gate insulating layer positioned on the substrate;
- a first gate conductive layer positioned on the first gate insulating layer;
- and
- a first gate capping layer positioned on the first gate conductive layer.
Dependencies are inferred from the claim text.