Semiconductor structure and manufacturing method thereof

A manufacturing method of a semiconductor structure, comprising:

• epitaxially forming a channel layer, a barrier layer and a P-type semiconductor material layer on a side of the substrate sequentially;
• and
• performing an oxygen doping process to the P-type semiconductor material layer and at least part of the barrier layer;
• wherein the P-type semiconductor material layer is activated and transformed to a P-type semiconductor layer, and the at least part of the barrier layer processed by oxygen doping forms an oxygen-doped region, and a remaining part of the barrier layer is a first region, an oxygen concentration of the oxygen-doped region is higher than an oxygen concentration of the first region, the oxygen-doped region is arranged on a side of the first region away from the substrate, and a projection of the oxygen-doped region on the substrate at least partially overlaps with a projection of the P-type semiconductor layer on the substrate.

A manufacturing method of a semiconductor structure, comprising:

• epitaxially forming a channel layer and a first region of a barrier layer on a side of a substrate sequentially;
• epitaxially forming an oxygen-doped region of the barrier layer on a side of the first region away from the substrate by introducing a gas source containing oxygen element, wherein an oxygen concentration of the oxygen-doped region is higher than an oxygen concentration of the first region and the oxygen-doped region is arranged on a side of the first region away from the substrate;
• and
• forming a P-type semiconductor material layer on a side of the oxygen-doped region away from the substrate, wherein the P-type semiconductor material layer is activated and transformed into a P-type semiconductor layer and a projection of the oxygen-doped region on the substrate at least partially overlaps with a projection of the P-type semiconductor layer on the substrate.