Integrated circuit photodetector
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Wei HSU, Tsai-Hao HUNG, Chung-Yu LIN, Ying-Hsun CHEN
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Abstract
An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.
Claims20
A method, comprising:
- forming a trench in a semiconductor substrate of an integrated circuit;
- forming one or more dielectric structures of dielectric material protruding from a bottom surface of the trench;
- and
- depositing a photosensitive material in the trench covering the one or more dielectric structures, wherein the photosensitive material has an index of refraction that is higher than an index of refraction the dielectric material of the one or more dielectric structures.
A method, comprising:
- applying a voltage between a semiconductor substrate of an integrated circuit and a photosensitive material positioned on the semiconductor material, the photosensitive material covering one or more dielectric structures protruding from the semiconductor substrate and having an index of refraction greater than an index of refraction of the one or more dielectric structures;
- and
- detecting an intensity of light incident on the integrated circuit based on a current flowing from the photosensitive material.
A method comprising:
- forming a trench in a semiconductor substrate of an integrated circuity;
- forming a first pillar of dielectric material protruding from a bottom of the trench to a height lower than a top of the semiconductor substrate;
- and
- forming a photosensitive material on the semiconductor material, the photosensitive material covering the pillar of dielectric material and having an index of refraction greater than an index of refraction of the pillar of dielectric material.
Dependencies are inferred from the claim text.