Image sensor device
AssigneeAdeia Semiconductor Technologies LLC
InventorRajesh Katkar
Life of this patent
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Abstract
Methods of forming a back side image sensor device, as well as back side image sensor devices formed, are disclosed. In one such a method, an image sensor wafer having a first dielectric layer with a first surface is obtained. A reconstituted wafer having a processor die and a second dielectric layer with a second surface is obtained. The reconstituted wafer and the image sensor wafer are bonded to one another including coupling the first surface of the first dielectric layer and the second surface of the second dielectric layer. In another method, such formation is for a processor die bonded to an image sensor wafer. In yet another method, such formation is for a processor die bonded to an image sensor die.
Claims21
(canceled)
An image sensor device, comprising:
- a sensor die from a reconstituted wafer, the sensor die comprising an image sensor embedded in a dielectric layer;
- and
- a processor die directly bonded to the sensor die without the use of an intervening adhesive.
An image sensor device, comprising:
- a sensor die from a reconstituted wafer, the sensor die comprising an image sensor embedded in a first dielectric layer, wherein the first dielectric layer includes one or more first metallic pads;
- and
- a processor die comprising a second dielectric layer, wherein the second dielectric layer includes one or more second metallic pads;
- and
- wherein the first dielectric layer and the second dielectric layer are directly bonded to one another without the use of an intervening adhesive;
- and
- wherein the processor die is communicatively coupled to the image sensor via direct hybrid bonds formed between the one or more first metallic pads and the one or more second metallic pads.
An image sensor device, comprising:
- a sensor die from a reconstituted wafer, the sensor die comprising an image sensor and a first dielectric layer;
- and
- a processor die comprising a second dielectric layer, wherein the first dielectric layer and the second dielectric layer are directly bonded to one another without the use of an intervening adhesive.
Dependencies are inferred from the claim text.