Display panel and manufacturing method thereof, and mobile terminal
AssigneeGuangzhou China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
InventorsBin Zhao, Hang Wang, Jun Zhao
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Abstract
The present application provides a display panel and a manufacturing method thereof, and a mobile terminal. The display panel includes a substrate, a film transistor layer, an oxygen supplement functional layer, and an electrode layer; the thin film transistor layer includes a gate electrode, a gate insulating layer, an active layer, and a source-drain electrode layer. Material of the active layer is metal oxide semiconductor; material of the electrode layer is metal oxide material. Wherein oxygen content on a side of the oxygen supplement functional layer close to the electrode layer is greater than oxygen content on a side of the oxygen supplement functional layer close to the active layer.
Claims20
A display panel, comprising:
- a substrate;
- a thin film transistor layer disposed on the substrate, the thin film transistor layer comprises a gate electrode, a gate insulating layer, an active layer, and a source-drain electrode layer disposed on the substrate, material of the active layer is metal oxide semiconductor;
- an oxygen supplement functional layer located on a side of the source-drain electrode layer away from the active layer;
- an electrode layer located on a side of the oxygen supplement functional layer away from the thin film transistor layer, material of the electrode layer is metal oxide material;
- wherein oxygen content on a side of the oxygen supplement functional layer close to the electrode layer is greater than oxygen content on a side of the oxygen supplement functional layer close to the active layer.
(canceled)
A method for manufacturing a display panel, wherein steps of the method comprise:
- providing a substrate, forming a gate electrode, a gate insulating layer, an active layer, a source-drain electrode layer, and a first passivation layer on the substrate in sequence;
- forming a metal oxide layer on the first passivation layer in an environment where gas pressure ratio of oxygen to inert gas is greater than 40%;
- and
- etching the metal oxide layer, conducting the etched metal oxide layer to form an electrode layer, wherein oxygen content of a side of the first passivation layer close to the electrode layer is greater than oxygen content on a side of the first passivation layer close to the active layer.
A mobile terminal, wherein the mobile terminal comprises a terminal body and a display panel, the terminal body and the display panel are combined integrally, the display panel comprises:
- a substrate;
- a thin film transistor layer disposed on the substrate, the thin film transistor layer comprising a gate electrode, a gate insulating layer, an active layer, and a source-drain electrode layer disposed on the substrate, material of the active layer is metal oxide semiconductor;
- an oxygen supplement functional layer located on a side of the source-drain electrode layer away from the active layer;
- an electrode layer located on a side of the oxygen supplement functional layer away from the thin film transistor layer, material of the electrode layer is metal oxide material;
- wherein oxygen content on a side of the oxygen supplement functional layer close to the electrode layer is greater than the oxygen content on a side of the oxygen supplement functional layer close to the active layer.
(canceled)
Dependencies are inferred from the claim text.