Thin-film transistor substrate

Abstract

A thin-film transistor substrate includes a first insulating film, a second insulating film located upper than the first insulating film, a first thin-film transistor, a second thin-film transistor, and a capacitive element. The first thin-film transistor includes a top-gate electrode and a first semiconductor region located above the first insulating film. The second thin-film transistor includes a second semiconductor region located above the second insulating film. The capacitive element includes at least a part of the top-gate electrode and a first low-resistive semiconductor region of the same semiconductor layer that includes the second semiconductor region, the first low-resistive semiconductor region overlapping at least a part of the top-gate electrode with an insulating film interposed therebetween.

Dependencies are inferred from the claim text.