Semiconductor structure of schottky devices

A semiconductor structure, comprising:

• a P-type semiconductor substrate;
• an N-type well region formed over the P-type semiconductor substrate;
• a first P-type well region formed over the P-type semiconductor substrate;
• a first active region formed over the first P-type well region, comprising a plurality of first fins extending in a first direction and a plurality of first source/drain features epitaxially grown on the first fins;
• a second active region formed over the N-type well region, comprising a plurality of second fins extending in the first direction and a plurality of second source/drain features epitaxially grown on the second fins;
• and
• a third active region formed over the N-type well region, comprising a plurality of third fins extending in the first direction;
• and
• a plurality of electrodes formed over the third active region, each extending in a second direction to contact the third fins, wherein the second direction is perpendicular to the first direction,
• wherein the electrodes, the first source/drain features and the second source/drain features are formed in the same level,
• wherein an emitter region of a Schottky bipolar junction transistor (BJT) is formed by the electrodes, a base region of the Schottky BJT is formed by the N-type well region, and a collector region of the Schottky BJT is formed by the P-type semiconductor substrate.