Semiconductor device with capacitor and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHSIN-LI CHENG, SHU-HUI SU, YU-CHI CHANG, YINGKIT FELIX TSUI, SHIH-FEN HUANG
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Abstract
A semiconductor device is provided. The semiconductor device comprises a first semiconductor die comprising a first capacitor, and a second semiconductor die in contact with the first semiconductor die and comprises a diode. The first semiconductor die and the second semiconductor die are arranged along a first direction, and a diode is configured to direct electrons accumulated at the first capacitor to a ground.
Claims20
A semiconductor device comprising:
- a first semiconductor die comprising a conductive via, a first capacitor and a second capacitor, wherein the conductive via and the second capacitor are electrically connected with the first capacitor;
- and
- a second semiconductor die in contact with the first semiconductor die, the second semiconductor die comprising a diode, wherein the first semiconductor die and the second semiconductor die are arranged along a first direction, the diode is configured to direct electrons accumulated at the first capacitor to a ground, and a depth of the first capacitor is smaller than a length of the conductive via.
A semiconductor device comprising:
- a first semiconductor die;
- a first capacitor embedded within the first semiconductor die;
- a conductive via adjacent the first capacitor and electrically connected with the first capacitor;
- a second capacitor embedded within the first semiconductor die and electrically connected with the first capacitor;
- and
- a second semiconductor die comprising a processing unit configured to receive a power signal from a power line, wherein the first semiconductor die is stacked on the second semiconductor die along a first direction, the first capacitor is electrically connected to the power line and configured to regulate the power signal, and a length of the conductive via is greater than a depth of the first capacitor.
A method for manufacturing a semiconductor device, comprising:
- forming a first semiconductor die comprising a conductive via, a first deep trench capacitor (DTC) and a second deep trench capacitor;
- forming a second semiconductor die comprising a processing unit;
- stacking the first semiconductor die on the second semiconductor die along a first direction;
- and
- electrically connecting the first deep trench capacitor to a power line configured to provide a power signal to the processing unit, wherein a distance between the first deep trench capacitor and the second deep trench capacitor is smaller than a depth of the first deep trench capacitor, the conductive via is electrically connected with the first capacitor, and a length of the conductive via is greater than a depth of the first deep trench capacitor.
Dependencies are inferred from the claim text.