# US 2024/0178166 A1 · Semiconductor package conductive terminals with reduced plating thickness

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- Number: US 2024/0178166 A1
- Document ID: US20240178166A1
- Status: Published application
- Kind: A1
- Application number: 18/072,426
- Filed: 2022-11-30
- Published: 2024-05-30
- Earliest claimed: 2022-11-30
- Assignees: Texas Instruments Incorporated
- Applicants: Texas Instruments Incorporated
- Inventors: Rafael Jose Lizares GUEVARA; Jose Arvin M. PLOMANTES
- Web page: https://patentgrep.com/patent/US20240178166A1

## CPC

- H10W 72/90: Bond pads, in general
- H10W 72/019: {of bond pads}
- H10W 72/075: {of bond wires}
- H10W 72/50: Bond wires
- H10W 72/01935: {by plating, e.g. electroless plating or electroplating}
- H10W 72/01955: {by using masks}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/555: {of outermost layers of multilayered bond wires, e.g. material of a coating}
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In some examples, a method for manufacturing a semiconductor package comprises forming a copper member on a surface; applying a photoresist to the copper member and the surface; and forming a cavity in the photoresist above the copper member. The cavity has a first volume with a first diameter and a second volume with a second diameter larger than the first diameter. The second volume is more proximal to the copper member than the first volume. The method also includes forming a nickel member in the second volume forming a palladium member in the first volume.

## Claims

### Claim 1

A method for manufacturing a semiconductor package, comprising:
forming a copper member on a surface;
applying a photoresist to the copper member and the surface;
forming a cavity in the photoresist above the copper member, the cavity having a first volume with a first diameter and a second volume with a second diameter larger than the first diameter, the second volume more proximal to the copper member than the first volume;
forming a nickel member in the second volume; and
forming a palladium member in the first volume.

### Claim 2 (depends on 1)

The method of claim 1, wherein forming the copper member comprises electroplating the copper member.

### Claim 3 (depends on 1)

The method of claim 1, wherein forming the cavity in the photoresist includes performing a first heating of the photoresist at a temperature ranging from 120 degrees Celsius to 130 degrees Celsius for 14 to 17 minutes.

### Claim 4 (depends on 3)

The method of claim 3, wherein forming the cavity in the photoresist includes, after performing the first heating, applying light energy in a range from 1950 milliJoules per centimeter squared to 2050 milliJoules per centimeter squared for 780 to 820 milliseconds per shot to expose the photoresist.

### Claim 5 (depends on 4)

The method of claim 4, wherein forming the cavity in the photoresist includes, after performing the exposure, performing a second heating of the photoresist at a temperature ranging from 104 degrees Celsius to 106 degrees Celsius for 3 to 5 minutes.

### Claim 6 (depends on 5)

The method of claim 5, wherein forming the cavity in the photoresist includes, after performing the second heating, developing the photoresist by applying developer solution puddles to the photoresist between 10 times and 12 times.

### Claim 7 (depends on 1)

The method of claim 1, wherein a top surface of the nickel member facing the palladium member has a first area that is smaller than a second area of a bottom surface of the nickel member facing the copper member.

### Claim 8 (depends on 1)

The method of claim 1, wherein a top surface of the nickel member has a first area that is between 90% to 95% of a second area of a bottom surface of the nickel member.

### Claim 9 (depends on 1)

The method of claim 1, further comprising coupling a bond wire to the palladium member.

### Claim 10

A method for manufacturing a semiconductor package, comprising:
forming a copper member on a surface;
applying a photoresist to the copper member and the surface;
performing a first heating of the photoresist at a temperature ranging from 120 degrees Celsius to 130 degrees Celsius for 14 to 17 minutes;
after performing the first heating, applying light energy in a range from 1950 milliJoules per centimeter squared to 2050 milliJoules per centimeter squared for 780 to 820 milliseconds per shot minutes to expose the photoresist;
after performing the exposure, performing a second heating of the photoresist at a temperature ranging from 104 degrees Celsius to 106 degrees Celsius for 3 to 5 minutes;
after performing the second heating, developing the photoresist by applying developer solution puddles to the photoresist between 10 times and 12 times, wherein the performance of the first heating, the exposure, the second heating, and the developing produce a cavity in the photoresist above the copper member, the cavity having a first volume with a first diameter and a second volume with a second diameter larger than the first diameter, the second volume more proximal to the copper member than the first volume;
forming a nickel member in the second volume; and
forming a palladium member in the first volume.

### Claim 11 (depends on 10)

The method of claim 10, wherein a first area of a top surface of the nickel member is smaller than a second area of a bottom surface of the nickel member.

### Claim 12 (depends on 10)

The method of claim 10, wherein the temperature of the first heating is 125 degrees Celsius, the light energy is 2000 milliJoules per centimeter squared, the temperature of the second heating is 105 degrees Celsius, and the developer solution puddles are applied to the photoresist 11 times.

### Claim 13

A semiconductor package, comprising:
a copper member having first and second surfaces opposing each other, the first surface of the copper member coupled to a circuit;
a nickel member having first and second surfaces opposing each other, the first surface of the nickel member and having a same area as the second surface of the copper member, the second surface of the nickel member having a smaller area than the first surface of the nickel member;
a palladium member having first and second surfaces opposing each other, the first surface of the palladium member coupled to and having a same area as the second surface of the nickel member; and
a conductive member coupled to the second surface of the palladium member.

### Claim 14 (depends on 13)

The semiconductor package of claim 13, wherein the conductive member is a ball bond coupled to a bond wire.

### Claim 15 (depends on 13)

The semiconductor package of claim 13, wherein the conductive member is a gold member.

### Claim 16 (depends on 13)

The semiconductor package of claim 13, wherein the area of the second surface of the nickel member is between 90% and 95% of an area of the first surface of the nickel member.

### Claim 17

A semiconductor package, comprising:
a copper member coupled to a circuit;
a nickel member having first and second surfaces opposite each other, the first surface of the nickel member coupled to the copper member, the second surface of the nickel member having an area smaller than 95% of an area of the first surface of the nickel member;
a palladium member having first and second surfaces opposite each other, the first surface of the palladium member coupled to the second surface of the nickel member; and
a conductive member coupled to the second surface of the palladium member.

### Claim 18 (depends on 17)

The semiconductor package of claim 17, wherein the first surface of the palladium member has an area matching the area of the second surface of the nickel member.

### Claim 19 (depends on 17)

The semiconductor package of claim 17, wherein the conductive member is a ball bond coupled to a bond wire.

### Claim 20 (depends on 17)

The semiconductor package of claim 17, wherein the conductive member is a gold member.