Late middle-of-line gate cut with power bar formation

A semiconductor device comprising:

• a first nanodevice comprised of a plurality of first transistors, wherein the first nanodevice includes a first source/drain contact and a second source/drain contact;
• a second nanodevice comprised of a plurality of second transistors, wherein the second nanodevice includes a third source/drain contact and a fourth source/drain contact, wherein the second nanodevice is located adjacent to and parallel to the first nanodevice;
• and
• a power bar located between the first nanodevice and the second nanodevice, wherein the power bar is connected to at least two source/drain contacts.

A semiconductor device comprising:

• a first nanodevice comprised of a plurality of first transistors, wherein the first nanodevice includes a first source/drain contact, a second source/drain contact, and a third source/drain contact;
• a second nanodevice comprised of a plurality of second transistors, wherein the second nanodevice includes a fourth source/drain contact, a fifth source/drain contact, and a sixth source/drain contact, wherein the second nanodevice is located adjacent to and parallel to the first nanodevice;
• and
• a power bar located between the first nanodevice and the second nanodevice, wherein the power bar is connected to at least two source/drain contacts.

A method of making a semiconductor device, the method comprising:

• forming a first nanodevice comprised of a plurality of first transistors, wherein the first nanodevice includes a first source/drain contact;
• forming a second nanodevice comprised of a plurality of second transistors, wherein the second nanodevice includes a second source/drain contact, wherein the second nanodevice is located adjacent to and parallel to the first nanodevice;
• and
• forming a power bar located between the first nanodevice and the second nanodevice, wherein the power bar is connected to the second source/drain contact, wherein a top surface of the power bar and the second source/drain contact are substantially in a same plane, and wherein the top surface of the power bar and the second source/drain contact are substantially a same height.