Local interconnect formation at double diffusion break

A microelectronic structure comprising:

• a first nano device that includes a plurality of first transistors;
• a second nano device that includes a plurality of second transistors, wherein the first nano device and the second nano device are parallel to each other;
• a doubled diffusion break that extends across the first nano device and the second nano device, wherein the first nano device includes a first dummy device, and wherein the second nano device includes a second dummy device;
• a back-end-of-the-line (BEOL) layer located on a frontside of the first nano device and the second nano device;
• and
• a backside interconnect located on a backside of the first nano device and the second nano device, wherein the BEOL layer is connected to the backside interconnect through the double diffusion break.

A microelectronic structure comprising:

• a first nano device that includes a plurality of first transistors;
• a second nano device that includes a plurality of second transistors, wherein the first nano device and the second nano device are parallel to each other;
• a doubled diffusion break that extends across the first nano device and the second nano device;
• a back-end-of-the-line (BEOL) layer located on a frontside of the first nano device and the second nano device;
• a backside interconnect located on a backside of the first nano device and the second nano device;
• and
• an interconnect contact that extends from the BEOL layer to the double diffusion break, wherein the interconnect contact extends from the first nano device to the second nano device, wherein the BEOL layer is connected to the backside interconnect through the double diffusion break.