Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• a substrate;
• a first device disposed on the substrate;
• a second device adjacent to the first device and disposed on the substrate;
• a ring structure disposed over the substrate to surround the first device and the second device;
• a first lid structure disposed over the ring structure and the second device, wherein the first lid structure has a through opening;
• a second lid structure disposed over the first device, wherein the second lid structure is partially located in the through opening of the first lid structure, and a material of the second lid structure is different from a material of the first lid structure;
• and
• a first adhesive layer disposed between the second lid structure and the first device, wherein the first adhesive layer comprises phase change thermal interface material (PCTIM).

A manufacturing method of a semiconductor device, comprising:

• providing a substrate;
• bonding a first device and a second device to the substrate;
• attaching a ring structure to the substrate and the second device, wherein the ring structure comprises a cover and a leg extending out from the cover, and the cover has a through opening exposing the first device;
• applying a first adhesive layer on the cover of the ring structure, wherein a material of the first adhesive layer comprises phase change thermal interface material (PCTIM);
• providing a lid structure, wherein the lid structure comprises a body and a protrusion protruding from the body;
• and
• inserting the protrusion of the lid structure into the through opening of the cover of the ring structure, so as to attach the lid structure to the ring structure and the first device, wherein the lid structure is attached to the ring structure through the first adhesive layer.