Manufacturing method, inspection method, and inspection device
AssigneeHamamatsu Photonics K.K.
InventorTomonori NAKAMURA
Life of this patent
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AssigneeHamamatsu Photonics K.K.
InventorTomonori NAKAMURA
Estimating the term…
A manufacturing method of a semiconductor device includes: a first step of forming a laminated film by growing crystals on a sapphire substrate, forming an insulating film on a laminated film, and forming contact holes at an electrical connection point of an n-GaN layer and an electrical connection point of a p-GaN layer in the insulating film to produce a first member; a second step of forming a conductive layer on the first member to produce a second member in which the conductive layer electrically connects the electrical connection point of the n-GaN layer and the electrical connection point of the p-GaN layer; a third step of irradiating the second member with excitation light and measuring light emission generated in the second member; and a fourth step of forming a first pad electrode and a second pad electrode to produce a semiconductor device.
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