Semiconductor device structure and method for manufacturing the same

A semiconductor device structure, comprising:

• a gate stack longitudinally oriented along a first direction;
• a first source/drain structure and a second source/drain structure formed at a first side and a second side of the gate stack respectively, wherein the first source/drain structure is substantially aligned with the second source/drain structure in a second direction;
• a contact structure formed over the first source/drain structure;
• and
• a dielectric structure attached to the contact structure in the first direction, wherein a top portion of the dielectric structure is wider than a middle portion of the dielectric structure in a cross-sectional view along the first direction.

A method for forming a semiconductor device structure, comprising:

• forming a first source/drain structure over a substrate;
• forming a gate stack adjacent to the first source/drain structure;
• forming a conductive strip structure over the first source/drain structure;
• forming a trench through the conductive strip structure to divide the conductive strip structure into a first portion and a second portion, wherein the first portion of the conductive strip structure at least partially covers the first source/drain structure;
• and
• forming a dielectric structure in the trench.