Method of manufacturing semiconductor device including a fin-type active region

A method of manufacturing a semiconductor device, the method comprising:

• forming a plurality of first mandrel patterns at a first mandrel pitch on a substrate;
• forming a first spacer on each of a plurality of side walls of each of the plurality of first mandrel patterns;
• and
• forming a first fin group and a second fin group by patterning the substrate by using the first spacer, wherein the first fin group is adjacent to the second fin group in a first direction,
• wherein the first fin group includes a first fin and a second fin adjacent to each other and arranged at a first fin pitch in the first direction, wherein the first fin and the second fin extend in a second direction that crosses the first direction,
• the second fin group includes a third fin and a fourth fin adjacent to each other and arranged at the first fin pitch in the first direction, wherein the third fin and the fourth fin extend in the second direction, and
• the second fin and the third fin, which is adjacent to the second fin, are arranged at a second fin pitch that is greater than three times the first fin pitch.

A method of manufacturing a semiconductor device, the method comprising:

• forming a plurality of first mandrel patterns at a first mandrel pitch in a first region of a substrate;
• forming a plurality of second mandrel patterns at the first mandrel pitch in a second region of the substrate;
• forming a plurality of first spacers on side walls of each of the plurality of first mandrel patterns;
• forming a plurality of second spacers on side walls of each of the plurality of second mandrel patterns;
• forming a plurality of first fin groups and a plurality of first dummy fin groups by patterning the first region of the substrate by using the plurality of first spacers, wherein the plurality of first fin groups are alternately arranged with the plurality of first dummy fin groups in a first direction;
• forming a plurality of second fin groups and a plurality of second dummy fin groups by patterning the second region of the substrate by using the plurality of second spacers, wherein the plurality of second fin groups are alternately arranged with the plurality of second dummy fin groups in a second direction;
• and
• removing the plurality of first dummy fin groups and the plurality of second dummy fin groups,
• wherein each of the plurality of first fin groups includes a first fin and a second fin adjacent to each other and arranged at a first fin pitch in the first direction, wherein the first fin and the second fin extend in a third direction that crosses the first direction,
• each of the plurality of first dummy fin groups includes a first dummy fin and a second dummy fin adjacent to each other and arranged at the first fin pitch in the first direction, wherein the first dummy fin and the second dummy fin extending in the third direction,
• the second fin and the first dummy fin, which is adjacent to the second fin, are arranged at a second fin pitch that is greater than the first fin pitch,
• each of the plurality of second fin groups includes a third fin and a fourth fin adjacent to each other and arranged at a third fin pitch in the second direction, wherein the third fin and the fourth fin extend in a fourth direction that crosses the second direction,
• each of the plurality of second dummy fin groups includes a third dummy fin and a fourth dummy fin adjacent to each other and arranged at the third fin pitch in the second direction, wherein the third dummy fin and the fourth dummy fin extend in the fourth direction,
• the fourth fin and the third dummy fin, which is adjacent to the fourth fin, are arranged at the third fin pitch,
• the first fin pitch is less than the third fin pitch, and
• the second fin pitch is greater than the third fin pitch.