Self-Aligned Trench MOSFET Contacts Having Widths Less Than Minimum Lithography Limits

A semiconductor device, comprising:

• a substrate including a surface;
• a gate electrode formed in a gate trench extending into the substrate from the surface;
• a channel region adjacent to the gate electrode and including a non-uniform channel dopant profile;
• a source region adjacent to the gate electrode between the surface and the channel region, the source region including a non-uniform source dopant profile;
• an insulator layer formed above the substrate;
• and
• a source contact extending through the insulator layer, the source contact including a width less than a minimum lithography limit for a processing capability.

A semiconductor device, comprising:

• a gate electrode formed in a gate trench extending into a substrate from a surface of the substrate;
• a channel region adjacent to the gate electrode and including a channel dopant profile;
• a source region adjacent to the gate electrode between the surface and the channel region, the source region including a source dopant profile;
• an insulator layer formed above the substrate;
• and
• a source contact extending through the insulator layer, the source contact including a width less than a minimum lithography limit for a processing capability.