Method for Gapfill
AssigneeApplied Materials, Inc.
InventorsYi XU, Yu LEI, Aixi ZHANG, Rongjun WANG
Life of this patent
Estimating the term…
Abstract
A method of gap fill may include depositing a sacrificial Si layer in an opening of a feature and on a field of a substrate. In addition, the method may include depositing a metal layer in the opening and on the field, where at least a portion of the sacrificial Si layer is replaced with the metal layer. The method may also include depositing a metal gapfill material in the opening and on the field directly over the metal layer, where the metal gapfill material completely fills the opening.
Claims20
A method for metal gapfill, comprising:
- depositing a sacrificial Si layer in an opening of a feature and on a field of a substrate;
- depositing a metal layer in the opening and on the field, wherein at least a portion of the sacrificial Si layer is replaced with the metal layer;
- and
- depositing a metal gapfill material in the opening and on the field directly over the metal layer, wherein the metal gapfill material completely fills the opening.
A method for metal gapfill, comprising:
- depositing a sacrificial Si layer atop a base metal layer in an opening of a feature and on a field of a substrate;
- performing an atomic layer deposition process atop the sacrificial Si layer to replace Si atoms with metal atoms and create a metal layer atop the base metal layer in the opening and on the field, wherein greater than or equal to about 95 wt % of the sacrificial Si layer is replaced with the metal layer;
- and
- depositing a metal gapfill material in the opening and on the field directly over the metal layer, wherein the metal gapfill material completely fills the opening.
A non-transitory, computer readable medium having instructions stored thereon that, when executed, cause a method for metal gapfill to be performed, the method comprising:
- depositing a sacrificial Si layer in an opening of a feature and on a field of a substrate;
- depositing a metal layer in the opening and on the field, wherein at least a portion of the sacrificial Si layer is replaced with the metal layer;
- and
- depositing a metal gapfill material in the opening and on the field directly over the metal layer, wherein the metal gapfill material completely fills the opening.
Dependencies are inferred from the claim text.