Backside metal patterning die singulation systems and related methods
AssigneeSemiconductor Components Industries, LLC
InventorMichael J. SEDDON
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Abstract
Implementations of die singulation systems and related methods may include forming a plurality of die on a first side of a substrate, forming a seed layer on a second side of a substrate opposite the first side of the substrate, using a shadow mask, applying a mask layer over the seed layer, forming a backside metal layer over the seed layer, removing the mask layer, and singulating the plurality of die included in the substrate through removing substrate material in the die street and through removing seed layer material in the die street.
Claims20
A method of singulating a plurality of die comprised in a silicon carbide substrate, the method comprising:
- forming a plurality of die on a first side of a silicon carbide substrate;
- using a shadow mask, applying a mask layer over a second side of the silicon carbide substrate;
- forming a backside metal layer over the second side of the silicon carbide substrate;
- removing the mask layer;
- and
- singulating the plurality of die comprised in the silicon carbide substrate through removing substrate material in a die street.
A method of singulating a plurality of die comprised in a substrate, the method comprising:
- forming a plurality of die on a first side of a substrate;
- using a shadow mask, applying a mask layer over a second side of the substrate;
- removing the shadow mask;
- forming a backside metal layer over the second side of the substrate;
- removing the mask layer;
- singulating the plurality of die comprised in the substrate through removing substrate material in a die street;
- and
- remote plasma healing a sidewall of each singulated die.
A method of singulating a plurality of die comprised in a substrate, the method comprising:
- forming a plurality of die on a first side of a substrate;
- forming an edge ring through thinning a second side of the substrate;
- using a shadow mask, applying a mask layer over the second side of the substrate;
- removing the shadow mask;
- forming a backside metal layer over the second side of the substrate;
- removing the mask layer;
- singulating the plurality of die comprised in the substrate through removing substrate material in a die street.
Dependencies are inferred from the claim text.