Insulating trench manufacturing
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsThierno Moussa BAH, Pascal GOURAUD, Patrick GROS D'AILLON, Emilie PREVOST
Life of this patent
Estimating the term…
Abstract
The present description concerns a method of manufacturing an insulating trench in a substrate, for an electronic device, comprising the following successive steps: (a) filling a trench formed in the substrate with a first insulating material; (b) depositing a first etch stop layer on the first material; (c) depositing a second layer of a second insulating material on the first etch stop layer; (d) etching down to the etch stop layer; and (e) depositing a third layer made of a third tight material.
Claims18
A method, comprising:
- forming an insulating trench in a substrate, for an electronic device including:
- filling a trench in the substrate with a first insulating material;
- forming a first etch stop layer on the first material;
- forming a second layer of a second insulating material on the first etch stop layer;
- etching down to the etch stop layer;
- and
- forming a third layer of a third trench sealing material.
A method, comprising:
- forming a trench in a substrate
- filling the trench a first insulating material;
- forming a first etch stop layer on the first insulating material;
- forming a second layer of a second insulating material on the first etch stop layer;
- forming a planarized surface by chemical mechanical polishing down to the first etch stop layer;
- and
- forming a third layer of a third trench sealing material on the planarized surface.
A device, comprising:
- a substrate having a first surface;
- a trench in the substrate, the trench having:
- a central cavity;
- a first insulating layer in the cavity;
- a stack in the central cavity, the stack includes:
- a first etch stop layer on the first insulating layer in the trench and on the first surface of the substrate;
- a second layer of a second insulating material in the trench, on the first etch stop layer and on the first surface of the substrate;
- and
- a third layer of a third sealing material on the second layer, on the trench, and on the first surface of the substrate.
Dependencies are inferred from the claim text.