Integrated circuit including a passive component in an interconnection part, and corresponding manufacturing method
AssigneesSTMicroelectronics France, STMicroelectronics (Crolles 2) SAS
InventorsHoussein El Dirani, Marouane Mastari, Mohamed Ali Nsibi
Life of this patent
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Abstract
The integrated circuit includes a semiconductor substrate having a front face including isolation structures that extend vertically into the substrate from the front face as far as a first depth, and an interconnection part comprising metal levels incorporating at least one passive component, above the front face of the substrate. The integrated circuit further includes a dielectric structure that is vertically aligned with the position of the at least one passive component, and that extends vertically into the substrate from the front face as far as a second depth that is greater than the first depth.
Claims20
An integrated circuit, comprising:
- a semiconductor substrate comprising:
- a front face surface,
- a plurality of isolation structures, each isolation structure extending vertically into the semiconductor substrate from the front face surface to a first depth of the semiconductor substrate, and
- an interconnection part comprising a plurality of metal levels incorporating a passive component;
- and
- a dielectric structure vertically aligned with the passive component, the dielectric structure extending vertically into the semiconductor substrate from the front face surface to a second depth greater than the first depth.
A method for manufacturing an integrated circuit, the method comprising:
- forming isolation structures in a semiconductor substrate extending vertically from a front face surface of the semiconductor substrate as far as a first depth of the semiconductor substrate;
- forming, above a first side of the front face surface of the semiconductor substrate, an interconnection part comprising a plurality of metal levels incorporating a passive component;
- and
- forming, before forming the passive component, a dielectric structure extending vertically into the semiconductor substrate from the front face surface as far as a second depth of the semiconductor substrate is greater than the first depth, the dielectric structure being vertically aligned with the, to be formed, passive component.
A device comprising an integrated circuit, the integrated circuit comprising:
- a semiconductor substrate comprising:
- a front face surface,
- a plurality of isolation structures, each isolation structure extending vertically into the semiconductor substrate from the front face surface to a first depth of the semiconductor substrate, and
- an interconnection part comprising a plurality of metal levels incorporating a passive component;
- and
- a dielectric structure vertically aligned with the passive component, the dielectric structure extending vertically into the semiconductor substrate from the front face surface to a second depth greater than the first depth.
Dependencies are inferred from the claim text.