Replacement material for backside gate cut feature

A semiconductor structure comprising:

• a gate structure surrounding a plurality of channel layers, wherein the gate structure includes a first work-function layer wrapping around the plurality of channel layers and a gate electrode disposed over the first work-function layer;
• an isolation feature separating the gate structure into two portions and electrically isolating the two portions, wherein the isolation feature comprises a portion below a bottommost surface of the gate structure;
• and
• a second work-function layer disposed between the gate structure and the isolation feature, wherein a portion of the second work-function layer is disposed on a top portion of a sidewall of the portion of the isolation feature.

A semiconductor structure comprising:

• a gate structure surrounding a plurality of channel layers;
• a dielectric layer disposed over the gate structure;
• an isolation feature extending through the gate structure and into the dielectric layer, wherein the isolation feature separates the gate structure into two portions;
• and
• a work-function layer disposed between the isolation feature and the gate structure and in direct contact with the isolation feature.