Back to results
US 2024/0177989 A1Published application
Method of forming improved interfaces and thin film by using high-density radical
AssigneeEq Tech Plus Co., Ltd.
InventorsDong Hwa SHIN, Yong Weon KIM
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a method of forming an oxide film by using a deposition apparatus includes depositing an insulating film on a silicon substrate, and forming an SiO2 thin film between the silicon substrate and the insulating film by performing annealing using OH radicals on the insulating film by using the deposition apparatus.
Claims7
A method of forming an oxide film by using a deposition apparatus, the method comprising:
- depositing an insulating film on a silicon substrate;
- and
- forming an SiO2 thin film between the silicon substrate and the insulating film by performing annealing using OH radicals on the insulating film by using the deposition apparatus.
Dependencies are inferred from the claim text.