Semiconductor processing tool cleaning
AssigneeTexas Instruments Incorporated
InventorsGregory McKee, David Claar
Life of this patent
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Abstract
The present disclosure generally relates to semiconductor processing tool cleaning, such as may be included in semiconductor processing for manufacturing an integrated circuit (IC). In an example, a cleaning process is performed on an interior surface of a chamber of a semiconductor processing tool. The cleaning process includes flowing a reactive gas into an interior volume of the chamber. The interior volume is defined at least in part by the interior surface. The reactive gas consists exclusively of boron trichloride (BCl3). After performing the cleaning process, a material layer over a semiconductor substrate is etched in the chamber.
Claims23
A method of manufacturing an integrated circuit (IC), the method comprising:
- performing a first cleaning process on an interior surface of a chamber of a semiconductor processing tool, the first cleaning process comprising flowing a reactive gas into an interior volume of the chamber, the interior volume being defined at least in part by the interior surface, the reactive gas consisting exclusively of boron trichloride (BCl3);
- and
- after performing the first cleaning process, etching a material layer over a semiconductor substrate in the chamber.
A method comprising:
- flowing a reactive gas consisting of boron trichloride (BCl3) into an interior volume of a chamber of a semiconductor processing tool;
- after flowing the reactive gas, performing a first purge of the interior volume of the chamber comprising flowing a non-reactive gas into the interior volume of the chamber;
- after performing the first purge, flowing an oxygen-containing gas into the interior volume of the chamber;
- and
- after flowing the oxygen-containing gas, performing a second purge of the interior volume of the chamber comprising flowing a gas into the interior volume of the chamber.
A processing tool for semiconductor processing, the processing tool comprising:
- a chamber having an interior volume;
- a substrate support disposed in the interior volume, the substrate support comprising a support surface configured to support a semiconductor substrate;
- and
- a controller comprising one or more processors and non-transitory memory comprising stored instructions, which when executed by the one or more processors, cause the controller to:
- flow a reactive gas consisting of boron trichloride (BCl3) into the interior volume of the chamber;
- after flowing the reactive gas, perform a first purge of the interior volume of the chamber comprising flowing a non-reactive gas into the interior volume of the chamber;
- after performing the first purge, flow an oxygen-containing gas into the interior volume of the chamber;
- and
- after flowing the oxygen-containing gas, perform a second purge of the interior volume of the chamber comprising flowing a gas into the interior volume of the chamber.
A method of cleaning a semiconductor etching tool, the method comprising:
- performing a first cleaning process on an interior surface of a chamber of the semiconductor etching tool, the first cleaning process comprising flowing one reactive gas into an interior volume of the chamber, the interior volume being defined at least in part by the interior surface, the one reactive gas consisting of boron trichloride (BCl3).
Dependencies are inferred from the claim text.