Dynamic read calibration

A method, comprising:

• identifying, among a plurality of wordlines, a group of wordlines, wherein each wordline of the group of wordlines is connected to a respective subset of memory cells among a plurality of memory cells on a memory device;
• assigning, to the group of wordlines, a specified charge loss classification value characterizing a shift of a threshold voltage distribution;
• selecting a page level of a page level hierarchy, wherein the page level comprises a set of memory cell charge states;
• selecting a first set of memory cells comprising one or more memory cells having their respective charge states corresponding to the page level;
• determining, for the first set of memory cells, an aggregate value of a first data state metric;
• responsive to determining that the aggregate value of the first data state metric satisfies a first criterion:
• identifying, among the first set of memory cells, a second set of memory cells charged to a specified charge state within the page level;
• determining, for the second set of memory cells, an aggregate value of a second data state metric based on one or more distributions of individual values of the second data state metric;
• maintaining a skew counter of skewed distributions of the second data state metric;
• identifying a read reference voltage offset associated with the specified charge state;
• updating the read reference voltage offset based on the value of the skew counter;
• and
• applying the updated read reference voltage offset in a read operation performed on the memory cells connected to the group of wordlines.

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

• identifying, among a plurality of wordlines, a group of wordlines, wherein each wordline of the group of wordlines is connected to a respective subset of memory cells among a plurality of memory cells on a memory device;
• assigning, to the group of wordlines, a specified charge loss classification value characterizing a shift of a threshold voltage distribution;
• selecting a page level of a page level hierarchy, wherein the page level comprises a set of memory cell charge states;
• selecting a first set of memory cells comprising one or more memory cells having their respective charge states corresponding to the page level;
• and
• for the first set of memory cells:
• determining an aggregate raw bit error rate (RBER) value;
• responsive to determining that the aggregate RBER value satisfies a first criterion:
• identifying, among the first set of memory cells, a second set of memory cells charged to a specified charge state within the page level;
• and
• determining, for the second set of memory cells, an aggregate error count (EC) based on one or more distributions of individual ECs;
• maintaining a skew counter of skewed distributions of the EC;
• and
• responsive to determining that the aggregate EC does not satisfy a second criterion, incrementing, for the group of wordlines, an occurrence counter that of the aggregate EC failing to satisfy the second criterion;
• responsive to determining that the value of the occurrence counter satisfies a third criterion, identifying, in a calibration table, a read reference voltage offset entry associated with the specified charge state;
• updating the read reference voltage offset entry based on the value of the skew counter;
• and
• applying the updated read reference voltage offset in a read operation performed on the memory cells connected to the group of wordlines.