Read operation with capacity usage detection scheme

A method comprising:

• receiving a read request that specifies a memory cell connected to a string of series-connected memory cells in an array of memory cells on a memory device, the string located at an intersection of a wordline and a bitline;
• causing a first voltage applied to the wordline to which the specified memory cell is connected to ramp to a first predetermined value;
• causing a second voltage applied to the bitline to which the specified memory cell is connected to ramp to a second predetermined value;
• comparing, using a current comparator, a current along the string with a reference current to generate an analog output signal;
• and
• causing a voltage offset, based on a magnitude of the analog output signal, to be applied to a read voltage level during a sensing operation performed on the specified memory cell.

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

• receiving a read request that specifies a memory cell connected to a string of series-connected memory cells in an array of memory cells on a memory device, the string located at an intersection of a wordline and a bitline;
• responsive to receiving the read request:
• causing a first voltage applied to the wordline to which the specified memory cell is connected to ramp to a first predetermined value;
• causing a second voltage applied to the bitline to which the specified memory cell is connected to ramp to a second predetermined value;
• comparing, using a current comparator, a current along the string with a reference current to generate an analog output signal;
• and
• causing a voltage offset, based on a magnitude of the analog output signal, to be applied to a read voltage level during a sensing operation performed on the specified memory cell.