Reading method and reading circuit of fram

Abstract

The present application discloses a reading method and a reading circuit of FRAM. The method comprises: converting changing rates of voltage signals on bit lines of a memory cell and a reference cell in a FRAM array to be consistent with magnitudes of corresponding voltages by respective differential circuits, inputting the voltage signals into a sense amplifier, and reading a voltage difference by the sense amplifier. A reading circuit using this method comprises two differential circuit modules and one sense amplifier; the differential circuit module is used to differentiate the voltage signals on the bit lines with respect to time to obtain the change rates of the voltage signals on the bit lines with respect to time; the sense amplifier is used to amplify the signal difference processed by the differential circuit modules and convert the information stored in a memory cell into “0” and “1”.

Dependencies are inferred from the claim text.