Operation method of storage controller for nonvolatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsYoungjoo SEO, Youngdeok SEO, Sangkwon MOON, Hyunkyo OH, Hee-Tai OH, Heewon LEE, Jisoo KIM
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsYoungjoo SEO, Youngdeok SEO, Sangkwon MOON, Hyunkyo OH, Hee-Tai OH, Heewon LEE, Jisoo KIM
Estimating the term…
An operation method of a storage controller, which is configured to control a nonvolatile memory device, includes initiating a first instance of a respective reliability operation for a respective memory block included in the nonvolatile memory device, the respective reliability operation including detecting a degradation level of the respective memory block and setting a respective skip reference value based on the detected degradation level; determining whether a respective number of consecutively skipped instances of the respective reliability operation is less than the respective skip reference value; and selectively skipping or performing a next instance of the respective reliability operation based on the determination result.
An operation method of a storage controller which is configured to control a nonvolatile memory device, the method comprising:
An operation method of a storage controller which is configured to control a nonvolatile memory device, the method comprising:
An operation method of a storage controller which is configured to control a nonvolatile memory device, the method comprising:
Dependencies are inferred from the claim text.