Erase operation for a memory system

A non-transitory computer-readable medium storing code comprising instructions which, when executed by a processor of an electronic device, cause the electronic device to:

• perform, on a block of memory cells of a memory system, a first portion of an erase operation;
• receive a write command to write data to the block of memory cells after performing the first portion of the erase operation;
• determine whether a threshold voltage of the block of memory cells satisfies a threshold based at least in part on receiving the write command;
• and
• perform, on the block of memory cells, a second portion of the erase operation based at least in part on determining that the threshold voltage satisfies the threshold.

A method, comprising:

• performing, on a block of memory cells of a memory system, a first portion of an erase operation;
• receiving a write command to write data to the block of memory cells after performing the first portion of the erase operation;
• determining whether a threshold voltage of the block of memory cells satisfies a threshold based at least in part on receiving the write command;
• and
• performing, on the block of memory cells, a second portion of the erase operation based at least in part on determining that the threshold voltage satisfies the threshold.