Resist underlayer film-forming composition
AssigneeNissan Chemical Corporation
InventorsHiroto OGATA, Mamoru TAMURA
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AssigneeNissan Chemical Corporation
InventorsHiroto OGATA, Mamoru TAMURA
Estimating the term…
A resist underlayer film formation composition including a solvent and a polymer or a compound including a structure represented by formula (100): (in formula (100), Ar represents an optionally substituted C6-40 aromatic ring group, L0 represents a single bond, an ester bond, an ether bond, an optionally substituted C1-10 alkylene group, or an optionally substituted C2-10 alkenylene group, T0 represents a single bond, an ester bond, an ether bond, an optionally substituted C1-10 alkylene group, or an optionally substituted C2-10 alkenylene group, provided that L0 and T0 are different, the n-number of R0 independently represent a hydroxy group, a halogen atom, a nitro group, a cyano group, an amino group, or a monovalent organic group, n represents an integer of 0-5, and * represents a binding moiety with a polymer or residue of the compound.
A resist underlayer film-forming composition comprising a solvent and a polymer or compound having a structure represented by the following Formula (100):
A resist underlayer film-forming composition comprising a solvent and a polymer,
A resist underlayer film-forming composition comprising a solvent and a polymer represented by the following Formula (P1):
A resist underlayer film-forming composition comprising a solvent and a polymer or compound having at a terminal thereof a structure represented by the following Formula (200):
A resist underlayer film-forming composition comprising a solvent and a polymer having at a terminal thereof a structure represented by the following Formula (300):
Dependencies are inferred from the claim text.