Linear discrete rdson temperature vgs compensation
AssigneeAlpha and Omega Semiconductor International LP
InventorGilbert S. Z. Lee
Life of this patent
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Abstract
A power MOSFET drain-source on resistance (Rdson) compensation device comprises circuitry configured to receive an input signal proportional to a voltage drop across a power MOSFET, a temperature dependent information and a gate-source voltage dependent information. The circuitry includes control logic and a first linear discrete voltage divider, wherein the first linear discrete voltage divider is configured to output a compensated voltage based on an at least one compensating control signal from the control logic that is based on at least one of the temperature dependent information or gate-source voltage dependent information.
Claims18
A power MOSFET drain-source on resistance (Rdson) compensation device comprising:
- circuitry configured to receive an input signal proportional to a voltage drop across a power MOSFET, a temperature dependent information corresponding to a temperature Ti of the MOSFET and a gate-source voltage dependent information corresponding to a current gate-source voltage Vgsj of the MOSFET, wherein the circuitry includes control logic and a first linear discrete voltage divider, wherein the first linear discrete voltage divider is configured to output a compensated voltage based on at least one compensating control signal from the control logic that is based on at least one of the temperature dependent signal or gate-source voltage dependent signal.
Dependencies are inferred from the claim text.