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US 2024/0175136 A1Published application
Manufacturing method for graphene film
AssigneeKorea Institute of Science and Technology
InventorsSeung Hee HAN, Unhyeon KANG, Eunbi JEONG, Soeun AHN, Kyoung Ho Jeon
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Abstract
An exemplary embodiment of the present invention can provide a method of manufacturing a graphene film, including preparing a substrate including a carbon layer in a chamber, and forming a graphene layer by forming plasma in the chamber and applying a positive voltage pulse to the substrate.
Claims11
A method of manufacturing a graphene film, the method comprising:
- preparing a substrate comprising a carbon layer in a chamber;
- and
- forming a graphene layer by forming plasma in the chamber and applying a positive voltage pulse to the substrate.
The method of claim 6, wherein:
- in the applying of a positive voltage pulse to the substrate,
- a frequency of the positive voltage pulse ranges from 1 kHz to 20 kHz, and a duty cycle of the positive voltage pulse ranges from 0.5% to 60%.
Dependencies are inferred from the claim text.